Graded GexSe100-x concentration in PCRAM

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257S055000, C257S063000, C257S296000, C257S528000, C257S536000

Reexamination Certificate

active

06856002

ABSTRACT:
The present invention provides a design for a PCRAM element which incorporates multiple metal-containing germanium-selenide glass layers of diverse stoichiometries. The present invention also provides a method of fabricating the disclosed PCRAM structure.

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