Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-02-15
2005-02-15
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S055000, C257S063000, C257S296000, C257S528000, C257S536000
Reexamination Certificate
active
06856002
ABSTRACT:
The present invention provides a design for a PCRAM element which incorporates multiple metal-containing germanium-selenide glass layers of diverse stoichiometries. The present invention also provides a method of fabricating the disclosed PCRAM structure.
REFERENCES:
patent: 3271591 (1968-09-01), Ovshinsky
patent: 3961314 (1976-06-01), Klose et al.
patent: 3966317 (1976-06-01), Wacks et al.
patent: 3983542 (1976-09-01), Ovshinsky
patent: 3988720 (1976-10-01), Ovshinsky
patent: 4177474 (1979-12-01), Ovshinsky
patent: 4267261 (1981-05-01), Hallman et al.
patent: 4368099 (1983-01-01), Huggett et al.
patent: 4597162 (1986-07-01), Johnson et al.
patent: 4608296 (1986-08-01), Keem et al.
patent: 4637895 (1987-01-01), Ovshinsky et al.
patent: 4646266 (1987-02-01), Ovshinsky et al.
patent: 4664939 (1987-05-01), Ovshinsky
patent: 4668968 (1987-05-01), Ovshinsky et al.
patent: 4670763 (1987-06-01), Ovshinsky et al.
patent: 4673957 (1987-06-01), Ovshinsky et al.
patent: 4678679 (1987-07-01), Ovshinsky
patent: 4696758 (1987-09-01), Ovshinsky et al.
patent: 4698234 (1987-10-01), Ovshinsky et al.
patent: 4710899 (1987-12-01), Young et al.
patent: 4728406 (1988-03-01), Banerjee et al.
patent: 4737379 (1988-04-01), Hudgens et al.
patent: 4766471 (1988-08-01), Ovshinsky et al.
patent: 4769338 (1988-09-01), Ovshinsky et al.
patent: 4775425 (1988-10-01), Guha et al.
patent: 4788594 (1988-11-01), Ovshinsky et al.
patent: 4809044 (1989-02-01), Pryor et al.
patent: 4818717 (1989-04-01), Johnson et al.
patent: 4843443 (1989-06-01), Ovshinsky et al.
patent: 4845533 (1989-07-01), Pryor et al.
patent: 4853785 (1989-08-01), Ovshinsky et al.
patent: 4891330 (1990-01-01), Guha et al.
patent: 5128099 (1992-07-01), Strand et al.
patent: 5159661 (1992-10-01), Ovshinsky et al.
patent: 5166758 (1992-11-01), Ovshinsky et al.
patent: 5177567 (1993-01-01), Klersy et al.
patent: 5296716 (1994-03-01), Ovshinsky et al.
patent: 5335219 (1994-08-01), Ovshinsky et al.
patent: 5341328 (1994-08-01), Ovshinsky et al.
patent: 5359205 (1994-10-01), Ovshinsky
patent: 5406509 (1995-04-01), Ovshinsky et al.
patent: 5414271 (1995-05-01), Ovshinsky et al.
patent: 5500532 (1996-03-01), Kozicki et al.
patent: 5534711 (1996-07-01), Ovshinsky et al.
patent: 5534712 (1996-07-01), Ovshinsky et al.
patent: 5536947 (1996-07-01), Klersy et al.
patent: 5543737 (1996-08-01), Ovshinsky
patent: 5591501 (1997-01-01), Ovshinsky et al.
patent: 5596522 (1997-01-01), Ovshinsky et al.
patent: 5687112 (1997-11-01), Ovshinsky
patent: 5694054 (1997-12-01), Ovshinsky et al.
patent: 5714768 (1998-02-01), Ovshinsky et al.
patent: 5751012 (1998-05-01), Wolstenholme et al.
patent: 5761115 (1998-06-01), Kozicki et al.
patent: 5789277 (1998-08-01), Zahorik et al.
patent: 5825046 (1998-10-01), Czubatyj et al.
patent: 5896312 (1999-04-01), Kozicki et al.
patent: 5912839 (1999-06-01), Ovshinsky et al.
patent: 5914893 (1999-06-01), Kozicki et al.
patent: 5933365 (1999-08-01), Klersy et al.
patent: 6011757 (2000-01-01), Ovshinsky
patent: 6084796 (2000-07-01), Kozicki et al.
patent: 6087674 (2000-07-01), Ovshinsky et al.
patent: 6141241 (2000-10-01), Ovshinsky et al.
patent: RE37259 (2001-07-01), Ovshinsky
patent: 6339544 (2002-01-01), Chiang et al.
patent: 6348365 (2002-02-01), Moore et al.
patent: 6388324 (2002-05-01), Kozicki
patent: 6404665 (2002-06-01), Lowery et al.
patent: 6418049 (2002-07-01), Kozicki et al.
patent: 6429064 (2002-08-01), Wicker
patent: 6437383 (2002-08-01), Xu
patent: 6462984 (2002-10-01), Xu et al.
patent: 6469364 (2002-10-01), Kozicki
patent: 6480438 (2002-11-01), Park
patent: 6487113 (2002-11-01), Park et al.
patent: 6501111 (2002-12-01), Lowery
patent: 6507061 (2003-01-01), Hudgens et al.
patent: 6511862 (2003-01-01), Hudgens et al.
patent: 6511867 (2003-01-01), Lowery et al.
patent: 6512241 (2003-01-01), Lai
patent: 6514805 (2003-02-01), Xu et al.
patent: 6531373 (2003-03-01), Gill et al.
patent: 6534781 (2003-03-01), Dennison
patent: 6545287 (2003-04-01), Chiang
patent: 6545907 (2003-04-01), Lowery et al.
patent: 6555860 (2003-04-01), Lowery et al.
patent: 6563164 (2003-05-01), Lowery et al.
patent: 6566700 (2003-05-01), Xu
patent: 6567293 (2003-05-01), Lowery et al.
patent: 6569705 (2003-05-01), Chiang et al.
patent: 6570784 (2003-05-01), Lowery
patent: 6576921 (2003-06-01), Lowery
patent: 6586761 (2003-07-01), Lowery
patent: 6589714 (2003-07-01), Maimon et al.
patent: 6590807 (2003-07-01), Lowrey
patent: 6593176 (2003-07-01), Dennison
patent: 6597009 (2003-07-01), Wicker
patent: 6605527 (2003-08-01), Dennison et al.
patent: 6613604 (2003-09-01), Maimon et al.
patent: 6621095 (2003-09-01), Chiang et al.
patent: 6625054 (2003-09-01), Lowery et al.
patent: 6638820 (2003-10-01), Moore
patent: 6642102 (2003-11-01), Xu
patent: 6646297 (2003-11-01), Dennison
patent: 6649928 (2003-11-01), Dennison
patent: 6660136 (2003-12-01), Li et al.
patent: 6667900 (2003-12-01), Lowery et al.
patent: 6671710 (2003-12-01), Ovshinsky et al.
patent: 6673648 (2004-01-01), Lowery
patent: 6673700 (2004-01-01), Dennison et al.
patent: 6674115 (2004-01-01), Hudgens et al.
patent: 6687153 (2004-02-01), Lowery
patent: 6687427 (2004-02-01), Ramalingam et al.
patent: 6690026 (2004-02-01), Peterson
patent: 6696355 (2004-02-01), Dennison
patent: 6707712 (2004-03-01), Lowery
patent: 6714954 (2004-03-01), Ovshinsky et al.
patent: 20020000666 (2002-01-01), Kozicki et al.
patent: 20020168820 (2002-11-01), Kozicki et al.
patent: 20030047765 (2003-03-01), Campbell
patent: 20030048744 (2003-03-01), Ovshinsky et al.
patent: 20030212724 (2003-11-01), Ovshinsky et al.
patent: 20030212725 (2003-11-01), Ovshinsky et al.
patent: 20040035401 (2004-02-01), Ramachandran et al.
patent: WO 9748032 (1997-12-01), None
patent: WO 9928914 (1999-06-01), None
patent: WO 0048196 (2000-08-01), None
patent: WO 0221542 (2002-03-01), None
Abdel-All, A.; Elshafie,A.; Elhawary, M.M., DC electric-field effect in bulk and thin-film Ge5As38Te57 chalcogenide glass, Vacuum 59 (2000) 845-853.
Adler, D.; Moss, S.C., Amorphous memories and bistable switches, J. Vac. Sci. Technol. 9 (1972) 1182-1189.
Adler, D.; Henisch, H.K.; Mott, S.N., The mechanism of threshold switching in amorphous alloys, Rev. Mod. Phys. 50 (1978) 209-220.
Afifi, M.A.; Labib, H.H.; El-Fazary, M.H.; Fadel, M., Electrical and thermal properties of chalcogenide glass system Se75Ge25−xSbx, Appl. Phys. A 55 (1992) 167-169.
Afifi, M.A.; Labib, H.H.; El-Fazary, M.H.; Fadel,, M., Electrical and thermal properties of chalcogenide glass system Se75Ge25−xSbx, Appl. Phys. A 55 (1972) 335-342.
Alekperova, Sh.M.; Gadzhieva, G.S., Current-Voltage characteristics of Ag2Se single crystal near the phase transition, Inorganic Materials 23 (1987) 137-139.
Aleksiejunas, A.; Cesnys, A., Switching phenomenon and memory effect in thin-film heterojunction of polycrystalline selenium-silver selenide, Phys. Stat. Sol. (a) 19 (1973) K169-K171.
Angell, C.A., Mobile ions in amorphous solids, Annu. Rev. Phys. Chem. 43 (1992) 693-717.
Aniya, M., Average electronegativity, medium-range-order, and ionic conductivity in superionic glasses, Solid state Ionics 136-137 (2000) 1085-1989.
Asahara, Y.; Izumitani, T., Voltage controlled switching in Cu—As—Se compositions, J. Non-Cryst. Solids 11 (1972) 97-104.
Asokan, S.; Prasad, M.V.N.; Parthasarathy, G.; Gopal, E.S.R., Mechanical and chemical thresholds in IV-VI chalcogenide glasses, Phys. Rev. Lett. 62 (1989) 808-810.
Baranovskii, S.D.; Cordes, H., On the conduction mechanism in ionic glasses, J. Chem. Phys. 111 (1999) 7546-7557.
Belin, R., Taillades, G.; Pradel, A.; Ribes, M., Ion dynamics in superionic chalcogenide glasses: complete conductivity spectra, Solid state Ionics 136-137 (2000) 1025-1029.
Belin, R.; Zerouale, A.; Pradel, A.; Ribes, M., Ion dynamics in the argyrodite compound Ag7GeSe5I: non-Arrhenius behavior and complete conductivity spectra, Solid State Ionics 143 (2001) 445-455.
Benmore, C.J.; Salmon, P.S., Structure of fast ion conducting and semiconducting glassy chalcogenide alloys, Phys. Rev. Lett. 73 (1994) 264-267.
Bernede, J.C., Influence du metal des electrodes sur les
Campbell Kristy A.
Gilton Terry L.
Moore John T.
Dickstein , Shapiro, Morin & Oshinsky, LLP
Duong Khanh
Zarabian Amir
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