Graded gate field

Details Graded gate field Graded gate field

2011-06-07

2011-06-07

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S336000, C257S344000, C257SE21413, C257SE29278

Reexamination Certificate

active

07956425

ABSTRACT:
Thin film transistors (TFT) and methods for making same. The TFTs generally comprise: (a) a semiconductor layer comprising source and drain terminals and a channel region therebetween; (b) a gate electrode comprising a gate and a gate dielectric layer between the gate and the channel region; (c) a first dielectric layer adjacent to the gate electrode and in contact with the source and drain terminals, the first dielectric layer comprising a material which comprises a dopant therein; and (d) an electrically functional source/drain extensions in the channel region, adjacent to the source and drain terminals, comprising a material which comprises the same dopant as the first dielectric layer.

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