Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-12
2006-12-12
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S341000, C257S344000, C257S408000, C257S409000, C257S488000
Reexamination Certificate
active
07148540
ABSTRACT:
An MOS device comprises a semiconductor layer of a first conductivity type and source and drain regions of a second conductivity type formed in the semiconductor layer, the source and drain regions being spaced apart from one another. A drift region is formed in the semiconductor layer proximate an upper surface of the semiconductor layer and between the source and drain regions, and a insulating layer is formed on the semiconductor layer above at least a portion of the drift region. A gate is formed on the insulating layer and at least partially between the source and drift regions. The MOS device further includes a conductive structure comprising a first end formed on the insulating layer and spaced apart from the gate, and a second end formed on the insulating layer and extending laterally toward the drain region above at least a portion of the drift region. The conductive structure is configured such that a thickness of the insulating layer under the second end of the conductive structure increases as the second end extends toward the drain region.
REFERENCES:
patent: 5907173 (1999-05-01), Kwon et al.
patent: 5912490 (1999-06-01), Hebert et al.
patent: 6215152 (2001-04-01), Hebert
P.C.A. Hammes et a1., “High efficiency, High Power WCDMA LDMOS Transistors for Base Stations,” Microwave Journal, Horizon House Publications, 4 pages, Apr. 2004.
P.C.A. Hammes et al., “High Efficiency, High Power WCDMA LDMOS Transistors for Base Stations,” Microwave Journal, Horizon House Publications, 4 pages, Apr. 2004.
Shibib Muhammed Ayman
Xu Shuming
Agere Systems Inc.
Chiu Tsz
Smith Zandra V.
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