Graded concentration epitaxial substrate for semiconductor devic

Details Graded concentration epitaxial substrate for semiconductor devic Graded concentration epitaxial substrate for semiconductor devic

1997-01-15

1999-01-19

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

In integrated circuit

257493, H01L 2358

Patent

active

058616578

ABSTRACT:
The epitaxial substrate of a semiconductor chip device has a resurf diffusion in at least one of its isolated wells in the device chip surface. The wells are separated by junction diffusions. The thickness of the epitaxial layer is reduced by placing an increased percentage of its total charge for given a breakdown voltage (punch-through voltage) in the lower portion of the layer.

REFERENCES:
patent: 4111720 (1978-09-01), Michel et al.
patent: 4485392 (1984-11-01), Singer
patent: 4729964 (1988-03-01), Natsuaki et al.

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