Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-10-10
1998-01-27
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257376, 257384, H01L 2976, H01L 2994
Patent
active
057125015
ABSTRACT:
A graded-channel semiconductor device (10) includes a substrate region (11) having a major surface (12). A source region (13) and a drain region (14) are formed in the substrate region (11) and are spaced apart to form a channel region (16). A doped region (18) is formed in the channel region (16) and is spaced apart from the source region (13), the drain region (14), and the major surface (12). The doped region (18) has the same conductivity type as the channel region (16), but has a higher dopant concentration. The device (10) exhibits an enhanced punch-through resistance and improved performance compared to prior art short channel structures.
REFERENCES:
patent: 4371955 (1983-02-01), Sasaki
patent: 4697198 (1987-09-01), Komori et al.
patent: 5021845 (1991-06-01), Hashimoto
patent: 5395773 (1995-03-01), Ravindhran et al.
patent: 5413949 (1995-05-01), Hong
patent: 5429956 (1995-07-01), Shell et al.
patent: 5434093 (1995-07-01), Chau et al.
patent: 5463241 (1995-10-01), Kubo
patent: 5489543 (1996-02-01), Hong
patent: 5512770 (1996-04-01), Hong
Hung Chang Lin and Wesley N. Jones, Transactions on Electron Devices, "Computer Analysis of the Double-Diffused MOS Transistor for Integrated Circuits", vol. ED-20, No. 3, Mar. 1973, pp. 275-282.
Lee et al., IEDM Technical Digest, International Electron Devices Meeting, Washington, DC, Dec. 5-8, 1993, "Room Temperature 0.1.mu.m CMOS Technology with 11.8 ps Gate Delay", pp. 6.5.1-6.5.4.
Kuroi et al., IEDM Technical Digest, International Electron Devices Meeting, San Francisco, CA, Dec. 11-14, 1994, "O.15.mu.m CMOS Process for High Performance and High Reliability", pp. 4.1.1-4.1.4.
Baker Frank K.
Candelaria Jon J.
Davies Robert B.
Wild Andreas A.
Zdebel Peter J.
Fahmy Wael
Jackson Kevin B.
Motorola Inc.
LandOfFree
Graded-channel semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Graded-channel semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Graded-channel semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-344587