Graded channel field effect transistor

Details Graded channel field effect transistor Graded channel field effect transistor

1997-05-02

1998-07-07

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257365, 257616, 257655, H01L 2712

Patent

active

057773645

ABSTRACT:
A MISFET having a graded semiconductor alloy channel layer of silicon germanium in which the germanium is graded to a single peak percentage level. The single peak percentage level defines the location of the charge carriers within the layer. The transconductance of the device can be optimized by controlling the location of the carriers within the channel.

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Taft et al., "Fabrication of a p-channel BICFET in the Ge.sub.x Si.sub.1-x /Si System," IEDM, pp. 570-573, 1988.
E. Kasper, "Growth and Properties of Si/SiGe Superlattices," Surface Science, vol. 174 pp. 630-639, 1986.

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