Graded channel field effect transistor

Details Graded channel field effect transistor Graded channel field effect transistor

1992-11-30

1998-10-13

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257192, 257194, 257616, 257191, H01L 2976, H01L 31117, H01L 310328

Patent

active

058215778

ABSTRACT:
A MISFET having a graded semiconductor alloy channel layer of silicon germanium in which the germanium is graded to a single peak percentage level. The single peak percentage level defines the location of the charge carriers within the layer. The transconductance of the device can be optimized by controlling the location of the carriers within the channel.

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Kasper, E., "Growth and Properties of Si/SiGe Superlattices", MSS-II Proceedings, Kyoto, Japan, p. 703 Dec. 1985.

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