Gold thin film vapor growing method

Details Gold thin film vapor growing method Gold thin film vapor growing method

1994-10-04

1996-02-13

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427250, 4272557, 427124, 427125, 427271, 117103, 117938, H05H 124, C23C 1600, C30B 2952

Patent

active

054910056

ABSTRACT:
A method of growing, in a vapor phase, a gold film having high electro-migration resistance and a flat surface, and capable of being buried in contact holes disposed in an insulating film of an integrated circuit device, for example, at a practical growing rate. Dimethylgold hexafluoroacetylacetonato (DMAu(hfac)), for example, is used as a starting gas, and vapor growth is carried out under specific conditions by utilizing thermal CVD. Adhesion of the gold film can be improved by converting it to a two-layered film by the combination of plasma enhanced CVD with thermal CVD.

REFERENCES:
patent: 4714627 (1987-12-01), Puddephatt et al.
patent: 4888204 (1989-12-01), Tutt et al.
patent: 5019531 (1991-05-01), Awaya et al.
Holloway et al., "Morphology and Deposition Conditions of CVD Au Films", Mat. Res. Syp Proc., vol. 204, 1991, US pp. 409-414.
"Thin Film Forming Device", Patent Abstracts of Japan, vol. 9, No. 66, Mar. 26, 1985.
"Multilayered Reflecting Mirror for X-Ray Optic", Patent Abstracts of Japan, vol. 15, No. 384, Sep. 27, 1991.

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