Gold/silicon eutectic die bonding method

Details Gold/silicon eutectic die bonding method Gold/silicon eutectic die bonding method

2006-11-27

2010-02-09

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S118000, C438S406000, C438S459000, C257SE21514, C257SE21596

Reexamination Certificate

active

07659191

ABSTRACT:
A direct gold/silicon eutectic die bonding method is disclosed. The method includes the steps of gold plating a die bonding pad, grinding a wafer to a desired thickness, dicing the wafer after the grinding step, picking a die, and attaching the die to the die bonding pad at a temperature above the gold/silicon eutectic temperature. For thinner wafers, a dicing before grinding process is employed.

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