Gold alloy thin wire for semiconductor devices

Details Gold alloy thin wire for semiconductor devices Gold alloy thin wire for semiconductor devices

1997-07-16

2000-06-27

Thibodeau, Paul

Stock material or miscellaneous articles

All metal or with adjacent metals

Foil or filament smaller than 6 mils

420507, 420508, 420509, 420510, B21C 3700, C22C 502

Patent

active

060804920

ABSTRACT:
To provide a gold alloy thin wire advantageously applicable to high density packaging of semiconductor devices, in which the wire deformation upon resin molding is reduced to successfully achieve reduction in the bonding pitch and the wire diameter, a gold alloy thin wire according to the present invention consists of 0.015 to 1.0 wt % Cu, 0.0002 to 0.02 wt % Ca, and the balance consisting of Au and unavoidable impurities. Preferably, the Cu content is 0.1 to 1.0 wt % and the Ca content is 0.001 to 0.02 wt %, and more preferably, Cu and Ca are present in a weight content ratio Cu/Ca of from 40 to 800. The gold alloy thin wire further preferably contains one or more of Pt, Pd and In in a total amount of from 0.01 to 3.0 wt % and/or one or more of Y, La, and Ce in a total amount of from 0.0003 to 0.03 wt %.

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patent: 5298219 (1994-03-01), Toyofuka et al.
patent: 5491034 (1996-02-01), Ohno et al.
patent: 5658664 (1997-08-01), Uno et al.

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