GMR configuration with enhanced spin filtering

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

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C360S324120, C427S128000, C427S103000, C427S126300

Reexamination Certificate

active

06882509

ABSTRACT:
Disclosed is a method of making a SVGMR sensor element. In the first embodiment a buffer layer is formed between a seed layer and a ferromagnetic (FM) free layer, the buffer layer being composed of alpha-Fe2O3having a crystal lattice constant that is close to the FM free layer's crystal constant and has the same crystal structure. The metal oxide buffer layer enhances the specular scattering. In the second embodiment, a high conductivity layer (HCL) is formed over the buffer layer to create a spin filter-SVGMR. The HCL layer enhances the GMR ratio of the spin filter SVGMR. The third embodiment include a pinned FM layer comprising a three layer structure of a lower AP layer, a space layer (e.g., Ru) and an upper AP layer.

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