Glue layer for adhesion improvement between conductive line...

Details Glue layer for adhesion improvement between conductive line... Glue layer for adhesion improvement between conductive line...

2008-07-29

2008-07-29

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S751000, C257S758000, C257S762000

Reexamination Certificate

active

11004065

ABSTRACT:
In an integrated circuit chip, a conductive line is formed in a first IMD layer. The conductive line is formed of a conductive line material that tends to form an oxide when exposed to an oxygen-containing substance. A glue layer is formed on the conductive line. The glue layer is formed of a non-oxygen-containing material capable of providing an oxygen barrier over the conductive line. The glue layer has a hardness greater than that of the conductive line. The glue layer preferably has a thickness between about 15 angstroms and about 75 angstroms. The etch stop layer is formed on the glue layer. The etch stop layer has a hardness greater than that of the glue layer. A second IMD layer is formed on the etch stop layer. The etch stop layer and/or the second IMD layer may be formed with a material comprising oxygen without oxidizing the conductive line.

REFERENCES:
patent: 6914320 (2005-07-01), Chen et al.

Affiliated with

Also associated with

Rating

Glue layer for adhesion improvement between conductive line... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Glue layer for adhesion improvement between conductive line..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Glue layer for adhesion improvement between conductive line... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3944791