Glue layer for adhesion improvement between conductive line...

Details Glue layer for adhesion improvement between conductive line... Glue layer for adhesion improvement between conductive line...

2008-07-29

2008-07-29

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S751000, C257S758000, C257S762000

Reexamination Certificate

active

07405481

ABSTRACT:
In an integrated circuit chip, a conductive line is formed in a first IMD layer. The conductive line is formed of a conductive line material that tends to form an oxide when exposed to an oxygen-containing substance. A glue layer is formed on the conductive line. The glue layer is formed of a non-oxygen-containing material capable of providing an oxygen barrier over the conductive line. The glue layer has a hardness greater than that of the conductive line. The glue layer preferably has a thickness between about 15 angstroms and about 75 angstroms. The etch stop layer is formed on the glue layer. The etch stop layer has a hardness greater than that of the glue layer. A second IMD layer is formed on the etch stop layer. The etch stop layer and/or the second IMD layer may be formed with a material comprising oxygen without oxidizing the conductive line.

REFERENCES:
patent: 6914320 (2005-07-01), Chen et al.

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