Glow discharge etching process for chromium

Details Glow discharge etching process for chromium Glow discharge etching process for chromium

1978-12-26

1980-10-21

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156652, 156656, 1566591, 204192E, 252 791, C23F 102

Patent

active

042292476

ABSTRACT:
Chromium is etched in a glow discharge without attack on Al/Cu, Si, SiO.sub.2, and Si.sub.3 N.sub.4 layers by etching in a low pressure ambient atmosphere containing a polychlorinated organic compound such as CCl.sub.4, water, and a material selected from the group consisting of the noble gases and oxygen.

REFERENCES:
patent: 3615956 (1971-10-01), Irving et al.
patent: 3951709 (1976-04-01), Jacob
patent: 3975252 (1976-08-01), Fraser et al.
patent: 3994793 (1976-11-01), Harvilchuck
Kodak Microelectronics Seminar 1976, A Study of the Optical Emission from a R7 Plasma During Semiconductor Etching, by W. R. Harshbarger et al, pp. 1-14.
IBM Technical Disclosure Bulletin, vol. 19, No. 3, Aug. 1976, Etching Fine Patterns in Chromium and Refractory Metals by H. C. Kluge et al, p. 900.
IBM Technical Disclosure Bulletin, vol. 20, No. 2, Jul. 1977, Increasing the Selectivity of the Plasma Etch Rate of SiO.sub.2 Relative to Si, p. 757.

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