Globally planarized binary optical mask using buried absorbers

Details Globally planarized binary optical mask using buried absorbers Globally planarized binary optical mask using buried absorbers

1994-11-21

1995-12-12

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430322, 430323, 430324, 430321, G03F 900

Patent

active

054748658

ABSTRACT:
A globally planarized binary optical mask has absorbers embedded (buried) in the mask substrate, instead of on the surface of the mask. Light scattering at rough vertical edges of absorbers of prior art masks are reduced or eliminated. Also, due to the buried nature of the absorbers, a triple singularity point encountered in prior art masks at the interface of three environments of quartz, absorber and air, no longer exists. The buried absorbers have an offset distance from the surface of the substrate so that with a minimum effective offset distance, defects and contaminants at the surface of the mask are no longer in the image plane, wherein alleviating a need for a pellicle to protect the mask surface. By reducing light scattering and distortion, the mask of the present invention allows for conventional optical lithography to be extended to ranges of shorter wavelength.

REFERENCES:
patent: 4414317 (1983-11-01), Culp et al.
patent: 4434224 (1984-02-01), Yoshikawa et al.
patent: 4890309 (1989-12-01), Smith et al.
patent: 5208125 (1993-05-01), Lowrey et al.
patent: 5217830 (1993-06-01), Lowrey
patent: 5225035 (1993-07-01), Rolfson
patent: 5288569 (1994-02-01), Lin
"Chrome dry etching for photomask fabrication"; W. W. Flack et al.; SPIE vol. 1809, 12th Annual BACUS Symposium (1992); pp. 85-96.

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