Uniform cross section ion beam system

Details Uniform cross section ion beam system Uniform cross section ion beam system

1989-01-04

1990-04-03

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Ion or electron beam irradiation

250398, H01J 3700

Patent

active

049143050

ABSTRACT:
An ion beam implant system having a source for producing multiple beamlets. The beamlets are emitted from the source and their intensity is controlled by an electrode array under control of a control apparatus. Downstream from the electrode array a resolving magnet shapes the beamlets and directs them to a region where they undergo further acceleration before impinging upon a workpiece. In a preferred technique, the workpiece is typically a silicon wafer and the ions are utilized for controlled doping of that wafer without need for ion beam scanning to selected portions of the workpiece or wafer movement through the ion beam during implantation.

REFERENCES:
patent: 3795833 (1974-03-01), King et al.
patent: 4522657 (1985-06-01), Rohatgi et al.
patent: 4578589 (1986-03-01), Aitken
patent: 4724328 (1988-02-01), Lischke

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