Global planarization process using patterned oxide

Details Global planarization process using patterned oxide Global planarization process using patterned oxide

1994-10-25

1996-04-16

Fourson, George

Fishing, trapping, and vermin destroying

437195, H01L 21465

Patent

active

055082335

ABSTRACT:
A method for planarizing the surface of a layer in a semiconductor device includes forming conductor regions 24, 26, and 28 on a layer of the semiconductor device; forming first insulator regions 30, 32, and 34 in gaps between the conductor regions 24, 26, and 28; and forming an insulator layer 40 over the first insulator regions 30, 32, and 34, and over the conductor regions 24, 26, and 28 such that a surface of the insulator layer 40 will be substantially planar.

REFERENCES:
patent: 5192715 (1993-03-01), Sliwa et al.
patent: 5296092 (1994-03-01), Kim

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