Global planarization method using plasma etching

Details Global planarization method using plasma etching Global planarization method using plasma etching

1998-09-08

1999-09-14

Dutton, Brian

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

438 16, 438690, 438712, H01L 2100, H01L 2166, H01L 21302, H01L 21461

Patent

active

059535784

ABSTRACT:
A semiconductor wafer is planarized by first mapping the flatness profile and then etching the wafer according to the flatness profile. Mapping is accomplished by scanning the wafer with a light beam. The flatness information is obtained by a phase detector comparing the phase of the reflected light beam and a reference light, and is then stored in a memory. The etching is implemented with scanning chemical ion beam etching, in which a reactive gas etches the wafer from spot to spot according to the instantaneous volume of reacting gas or the potential at the wafer, and is controlled by the data stored in the memory. The method can be used to planarize both semiconductor and metal.

REFERENCES:
patent: 4986664 (1991-01-01), Lovoi
patent: 5386119 (1995-01-01), Ledger
patent: 5744400 (1998-04-01), Dyer
patent: 5795493 (1998-08-01), Bukhman et al.
patent: 5870187 (1999-02-01), Uritshk et al.

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