Semiconductor device manufacturing: process – Chemical etching – Having liquid and vapor etching steps
Reexamination Certificate
2005-04-26
2005-04-26
Goudreau, George A. (Department: 1763)
Semiconductor device manufacturing: process
Chemical etching
Having liquid and vapor etching steps
C438S692000, C438S694000, C438S725000, C216S088000
Reexamination Certificate
active
06884729
ABSTRACT:
Methods for manufacturing substrates with difficult to polish features using reverse mask etching and chemical mechanical planarization techniques.
REFERENCES:
patent: 4789648 (1988-12-01), Chow et al.
patent: 4956313 (1990-09-01), Cote et al.
patent: 5137544 (1992-08-01), Medellin
patent: 5157876 (1992-10-01), Medellin
patent: 5209816 (1993-05-01), Yu et al.
patent: 5244523 (1993-09-01), Tollini
patent: 5340370 (1994-08-01), Cadien et al.
patent: 5354490 (1994-10-01), Yu et al.
patent: 5391258 (1995-02-01), Brancaleoni et al.
patent: 5476606 (1995-12-01), Brancaleoni et al.
patent: 5527423 (1996-06-01), Neville et al.
patent: 5529954 (1996-06-01), Iijima et al.
patent: 5540811 (1996-07-01), Morita
patent: 5663107 (1997-09-01), Peschke et al.
patent: 5783489 (1998-07-01), Kaufman et al.
patent: 5792707 (1998-08-01), Chung
patent: 5954997 (1999-09-01), Kaufman et al.
patent: 5993686 (1999-11-01), Streinz et al.
patent: 6004653 (1999-12-01), Lee
patent: 6015506 (2000-01-01), Streinz et al.
patent: 6015755 (2000-01-01), Chen et al.
patent: 6033596 (2000-03-01), Kaufman et al.
patent: 6039891 (2000-03-01), Kaufman et al.
patent: 6063306 (2000-05-01), Kaufman et al.
patent: 6063702 (2000-05-01), Chung
patent: 6068787 (2000-05-01), Grumbine et al.
patent: 6093656 (2000-07-01), Lin
patent: 6103581 (2000-08-01), Lin et al.
patent: 6121143 (2000-09-01), Messner et al.
patent: 6319837 (2001-11-01), Chittipeddi et al.
patent: 6366500 (2002-04-01), Ogura et al.
patent: 6387810 (2002-05-01), Beardsley et al.
Lee Jui-Kun
Mikolas David G.
Yu Chris C.
Cabot Microelectronics Corporation
Goudreau George A.
Hughes A. Blair
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