Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2006-03-07
2006-03-07
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S455000, C438S118000, C428S426000, C428S432000
Reexamination Certificate
active
07008855
ABSTRACT:
A lead-containing glass material of the type suitable for use in a wafer bonding process, wherein the moisture resistance of the glass material is increased by the presence of a lead phosphate coating on an outer exposed surface of the material, thereby acting as a barrier to reaction of moisture with the lead of the glass material. A source of reactive phosphate ions is applied to the glass material so as to spontaneously form the desired lead phosphate coating.
REFERENCES:
patent: 4079022 (1978-03-01), Ferrarini et al.
patent: 6737375 (2004-05-01), Buhrmaster et al.
Baney Brenda B.
Baney William J.
Hude Heather
Chmielewski Stefan V.
Delphi Technologies Inc.
Le Dung A.
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