Giant magnetoresistive effect memory cell

Details Giant magnetoresistive effect memory cell Giant magnetoresistive effect memory cell

1996-09-06

1999-09-07

Zarabian, A.

Static information storage and retrieval

Systems using particular element

Magnetoresistive

365171, 365173, G11C 1100

Patent

active

059497076

ABSTRACT:
A digital data memory having a bit structure in a memory cell based on an intermediate separating material with two major surfaces having thereon a magnetoresistive, anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations.

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Design, Simulation, and Realization of Solid State Memory Element Using the Weakly Coupled GMR Effect: by Wang et al., IEEE Transactions on Magnetics, vol. 32, No. 2, Mar. 1996.
"Quarternary Giant Magnetoresistance Random Access Memory" by Wang et al., J. Appl. Phys., 79 (8), Apr. 15, 1996, pp. 6639-6641.
"Analytical Model in a Weakly Coupled Sandwich for Memory Purposes" by Wang et al., J. Appl. Phys., 79 (8), Apr. 15, 1996, pp. 6649-6651.
"Solid-State Memory Using GMR Films" by H. Sakakima et al., Central Research Lab, Matsushita Elec. Ind. Co., Ltd., vol. 20, No. 1, 1996.

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