Static information storage and retrieval – Systems using particular element – Magnetoresistive
Patent
1997-09-04
1999-10-12
Nguyen, Tan T.
Static information storage and retrieval
Systems using particular element
Magnetoresistive
365173, 257295, G11C 1115
Patent
active
059663227
ABSTRACT:
A digital data memory having a bit structure in a memory cell based on an intermediate separating material with two major surfaces having thereon a magnetoresistive, anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations. Bit structures can be fabricated with further alternating intermediate separating, material layers and varied thickness ferromagnetic thin-film layers, and a configuration thereof can be provided for use as an isolated memory cell.
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Everitt Brenda A.
Pohm Arthur V.
Nguyen Tan T.
Nonvolatile Electronics Incorporated
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