Gettering technique for wafers made using a controlled...

Details Gettering technique for wafers made using a controlled... Gettering technique for wafers made using a controlled...

2005-05-10

2005-05-10

Chaudhari, Chandra (Department: 2813)

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

C438S526000

Reexamination Certificate

active

06890838

ABSTRACT:
A technique for forming a gettering layer in a wafer made using a controlled cleaving process. The gettering layer can be made by implanting using beam line or plasma immersion ion implantaion, or made by forming a film of material such as polysilicon by way of chemical vapor deposition. A controlled cleaving process is used to form the wafer, which is a multilayered silicon on insulator substrate. The gettering layer removes and/or attracts impurities in the wafer, which can be detrimental to the functionality and reliability of an integrated circuit device made on the wafer.

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