Active solid-state devices (e.g. – transistors – solid-state diode – Including region containing crystal damage
Patent
1997-10-29
1999-07-27
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Including region containing crystal damage
257913, H01L 2930, H01L 2358
Patent
active
059295074
ABSTRACT:
In one aspect, the invention pertains to a method of forming a gettering region within an Si semiconductor wafer, the method including: a) providing a semiconductor material wafer; b) providing a background region within the semiconductor material wafer, the background region being doped with a first-type conductivity enhancing dopant, the first-type conductivity enhancing dopant being either n-type or p-type; c) implanting a second-type conductivity enhancing dopant into the background region to form a second-type implant region entirely contained within the background region, the second-type conductivity enhancing dopant being of an opposite type than the first-type conductivity enhancing dopant of the background region; and d) implanting a neutral-conductivity-type conductivity enhancing dopant into the second-type implant region to form a metals gettering damage region entirely contained within the second-type implant region. The invention also pertains to gettering region structures.
REFERENCES:
patent: 4116719 (1978-09-01), Shimizu et al.
patent: 4144100 (1979-03-01), MacIver et al.
patent: 4178191 (1979-12-01), Flatley
patent: 4665425 (1987-05-01), Piotrowski
patent: 4717680 (1988-01-01), Piotrowski
patent: 4960731 (1990-10-01), Spitz et al.
patent: 4986841 (1991-01-01), Oyoshi et al.
patent: 5162241 (1992-11-01), Mori et al.
patent: 5183767 (1993-02-01), Baratte et al.
patent: 5198371 (1993-03-01), Li
patent: 5244819 (1993-09-01), Yue
patent: 5272373 (1993-12-01), Baratte et al.
patent: 5453385 (1995-09-01), Shinji
patent: 5578507 (1996-11-01), Kurol
patent: 5731637 (1998-03-01), Hori
patent: 5757063 (1998-05-01), Tomita
Handout, 2nd annual "Smart and Economic Device and Process Designs for ULSI MeV Technology" Seminar, sponsored by Genus, Inc., Jul. 20, 1994, 10 pages .
Gonzalez Fernando
Honeycutt Jeffrey W.
Jackson, Jr. Jerome
Micro)n Technology, Inc.
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