Gettering process for semiconductor wafers

Details Gettering process for semiconductor wafers Gettering process for semiconductor wafers

1988-10-03

1989-11-07

Doll, John

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG66, 156DIG73, 437 13, 437939, 437946, G30B 3300

Patent

active

048789887

ABSTRACT:
A reduction in the number of impurities present in semiconductor wafers is obtained by gettering the impurities prior to mechanically lapping both wafer surfaces. Damage is created on both surfaces of the semiconductor wafer by the sawing of an ingot into many wafers. The impurities are then gettered to the damaged surfaces by subjecting the wafer to a high temperature. The subsequent lapping operation then removes the damaged regions along with the gettered impurities.

REFERENCES:
patent: 4276114 (1981-06-01), Takano et al.
patent: 4597822 (1986-07-01), Benjamin et al.

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