Gettering of silicon on insulator using relaxed silicon...

Details Gettering of silicon on insulator using relaxed silicon... Gettering of silicon on insulator using relaxed silicon...

2003-05-21

2010-02-16

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Gettering of substrate

C438S473000, C438S476000, C257SE21320

Reexamination Certificate

active

07662701

ABSTRACT:
One aspect of this disclosure relates to a method for creating proximity gettering sites in a silicon on insulator (SOI) wafer. In various embodiments of this method, a relaxed silicon germanium region is formed over an insulator region of the SOI to be proximate to a device region. The relaxed silicon germanium region generates defects to getter impurities from the device region. Other aspects are provided herein.

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