Gettering of impurities by forming a stable chemical compound

Details Gettering of impurities by forming a stable chemical compound Gettering of impurities by forming a stable chemical compound

1994-02-04

1995-07-25

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

Deep level dopant

257610, 257617, 257928, 437 10, 437 13, 437 21, H01L 21324, H01L 2176, H01L 29167

Patent

active

054364981

ABSTRACT:
Reactor atoms (22) are introduced into a silicon substrate (10) by ion implantation to combine with metal impurities (18) to form stable chemical compounds (24). The stable compounds do not decompose and release the metal impurities during subsequent processing steps. Such metal impurities are detrimental to semiconductor devices formed in active regions (16, 17) in the silicon substrate. The reactor atoms such as sulfur are chosen to be substantially immobile in silicon at normal semiconductor processing temperatures. The metal impurities such as iron are effectively gettered to increase performance and reliability of semiconductor devices formed in the active regions (16, 17) in the silicon substrate.

REFERENCES:
patent: 4489480 (1984-12-01), Martin et al.
patent: 4504334 (1985-03-01), Schaake et al.
patent: 4868133 (1989-09-01), Huber
patent: 4881115 (1989-11-01), Lesk et al.
patent: 5308776 (1994-05-01), Gotou

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