Gettering method and a wafer using the same

Details Gettering method and a wafer using the same Gettering method and a wafer using the same

2011-04-12

2011-04-12

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Gettering of substrate

By layers which are coated, contacted, or diffused

C438S058000, C438S143000, C438S471000, C257SE21122, C257SE21143

Reexamination Certificate

active

07923353

ABSTRACT:
It is shown in the invention a method for manufacturing a semiconductor wafer structure with an active layer for impurity removal, which method comprises phases of depositing a first layer on a first wafer surface for providing an active layer, an optional phase of preparation for said first layer for next phase, growing thermal oxide layer on a second wafer, bonding said first and second wafers into a stack, annealing the stack for a crystalline formation in said thermal oxide layer as a second layer, and thinning said first wafer to a pre-determined thickness. The invention concerns also a wafer manufactured according to the method, chip that utilizes such a wafer structure and an electronic device utilizing such a chip.

REFERENCES:
patent: 5240876 (1993-08-01), Gaul et al.
patent: 6890838 (2005-05-01), Henley et al.
patent: 7427773 (2008-09-01), Chu et al.
patent: 2004/0097055 (2004-05-01), Henley et al.
patent: 2007/0158315 (2007-07-01), Tanaka et al.
patent: 2007/0166954 (2007-07-01), Yamazaki et al.

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