Germanosilicate spin-on glasses

Details Germanosilicate spin-on glasses Germanosilicate spin-on glasses

1985-06-21

1990-06-19

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

65 6053, 156653, 156656, 156657, 1566591, 156662, 357 71, 357 73, 437228, 437235, 501 55, H01L 21306, B44C 122, C03C 1700, C03C 2502

Patent

active

049350951

ABSTRACT:
A process is disclosed for forming a planarized or smooth surface binary glass insulating film comprised of germanium dioxide and silicon dioxide by a spin-on process. The resulting structure has a film thickness uniformity which varies less than 5% over the surface of the wafer. The structure is formed by mixing a predetermined solution of TEOS and TEOG in a lower alcohol or ketone solvent and catalyzing by the addition of sufficient acid to raise the pH to 1.5 to 2.0 to favor gel formation. The resultant solution is then spun on at an RPM selected to give the desired film thickness for a given solids content of the solution.

REFERENCES:
patent: 3475210 (1969-10-01), Lehrer
patent: 4417914 (1983-11-01), Lehrer
patent: 4490737 (1984-12-01), Pierce et al.
patent: 4539744 (1985-09-01), Burton
VLSI Technology, edited by S. M. Sze, ISBN 0-07-062686-3 (1983), pp. 107, 109, 111-115.
Extended Abstracts, vol. 84, No. 2, 1984, pp. 488-489, Abstract No. 350, New Orleans, La., U.S.; S. K. Gupta: "Spin-on Glass Materials for Smooth Interlevel Dielectric Layers".
U.S. Application Ser. No. 765,892, filed 8/14/85.

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