Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-29
2009-06-23
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257SE29082, C257SE29150, C257SE29255, C257SE29297, C438S197000, C438S296000
Reexamination Certificate
active
07550796
ABSTRACT:
A germanium semiconductor device and a method of manufacturing the same are provided. The method includes the steps of: forming an isolation layer on a substrate using a shallow trench; forming a silicon-nitride layer on the substrate, and selectively etching the silicon nitride layer to expose source and drain regions; injecting impurities onto a surface of the substrate over the exposed source and drain regions using delta-doping to form a delta-doping layer; selectively growing a silicon germanium layer containing impurities on the delta-doping layer; rapidly annealing the substrate and forming source and drain regions by diffusion of the impurities; depositing an insulating layer on the entire surface of the substrate; etching the insulating layer and forming source and drain contact parts to be in contact with source and drain terminals; depositing metal over the insulating layer having the source and drain contact parts thereon and forming a metal silicide layer; and after forming the silicide layer, forming the source and drain terminals to be in contact with the silicide layer. Accordingly, the source and drain regions having a shallow junction depth may be ensured by forming the source and drain regions through annealing after delta-doping and selectively growing the silicon germanium layer containing high-concentration impurities. Also, the germanium silicide layer is stably formed by the silicon germanium layer grown in the source and drain regions, and thus contact resistance is lowered and driving current of the device is improved.
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Bae Hyun Cheol
Kim Sang Hun
Lee Sang Heung
Electronics and Telecommunications Research Institute
Pert Evan
Rabin & Berdo PC
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