Germanium on insulator fabrication via epitaxial germanium...

Details Germanium on insulator fabrication via epitaxial germanium... Germanium on insulator fabrication via epitaxial germanium...

2007-10-09

2007-10-09

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S455000, C438S508000, C257SE21092, C257SE21127

Reexamination Certificate

active

10646681

ABSTRACT:
A method of forming a germanium-on-insulator (GOI). An epitaxial germanium layer is formed on top of a first substrate. A first dielectric film is formed on top of the epitaxial germanium layer. A second substrate is provided. The first substrate is bonded to the second substrate by bonding the first dielectric film to the second substrate. The bonding resulted in a bonded wafer pair. The first substrate is removed after the bonding to expose epitaxial germanium layer to form the GOI substrate.

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