Metal treatment – Stock – Ferrous
Patent
1984-11-01
1986-05-13
Larkins, William D.
Metal treatment
Stock
Ferrous
148DIG1, 148DIG58, 148DIG81, 148DIG158, 357 2, 357 52, 357 58, 204192S, 204192D, 427 92, H01L 21314, H01L 3110, G01T 124
Patent
active
045890064
ABSTRACT:
Passivation of predominantly crystalline semiconductor devices (12) is provided for by a surface coating (21) of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating (21) of amorphous germanium onto the etched and quenched diode surface (11) in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices (12), which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating (21) compensates for pre-existing undesirable surface states as well as protecting the semiconductor device (12) against future impregnation with impurities.
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Haller Eugene E.
Hansen William L.
Clouse, Jr. Clifton E.
Gaither Roger S.
Hightower Judson R.
Larkins William D.
The United States of America as represented by the United States
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