Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Patent
1998-07-22
2000-02-08
Trinh, Michael
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
438197, 438299, 438770, H01L 213205, H01L 21336
Patent
active
060227966
ABSTRACT:
Corner conduction in a conduction channel of a field effect transistor is controlled by the geometrical configuration of the gate oxide and gate electrode at the sides of the conduction channel. Rounding the corners of the conduction channel or forming depressions at edges of trench structures such as deep or shallow trench isolation structures and/or trench capacitors develop recesses in a surface of a substrate at an interface of active areas and trench structures in which a portion of the gate oxide and gate electrode are formed so that the gate oxide and gate electrode effectively wrap around a portion of the conduction channel of the transistor. Particularly when such transistors are formed in accordance with sub-micron design rules, the geometry of the gate electrode allows the electric field in the conduction channel to be modified without angled implantation to regulate the effects of corner conduction in the conduction channel. Thus the conduction characteristic near cut-off can be tailored to specific applications and conduction/cut-off threshold voltage can be reduced at will utilizing a simple, efficient and high-yield manufacturing process.
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Berry Wayne S.
Faul Juergen
Haensch Wilfried
Mohler Rick L.
International Business Machines - Corporation
Siemens Aktiengesellschaft
Trinh Michael
Walter Howard J.
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