Geometric phase analysis for mask alignment

Data processing: generic control systems or specific application – Specific application – apparatus or process – Product assembly or manufacturing

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356349, 356363, 356400, 356401, 257466, 345953, G06F 1900, G06G 766

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active

060616067

ABSTRACT:
A method of measuring overlay error comprises forming a first mask having a first alignment array comprising a periodic pattern of first features having a first periodicity, forming a second mask having a second alignment array comprising a pattern of second features having the first periodicity, the first alignment array being adjacent the second alignment array, the first alignment array and the second alignment array forming a combined alignment array, transforming the combined alignment array to produce a transformed array, selecting a first region within the transformed array, inverse transforming the region to produce geometric phase shift information, averaging the phase shift information, converting the averaged phase shift information into a value for misalignment in a first direction corresponding to the first region, repeating the selecting, inverse transforming, averaging and converting using a second region within the transformed array to calculate a value for misalignment in a second direction corresponding to the second region, calculating an overlay error between the first and second mask levels by adding the components of misalignment in the first direction and second direction.

REFERENCES:
patent: 3840749 (1974-10-01), O'Keeffe et al.
patent: 5100237 (1992-03-01), Wittekoek et al.
patent: 5481362 (1996-01-01), Van Den Brink et al.
patent: 5506684 (1996-04-01), Ota et al.
patent: 5917604 (1999-06-01), Dirksen et al.
Hytch et al., "Geometric Phase Analysis of High-Resolution Electron Microscopy Images of Antiphase Domains: Example Cu.sub.3 Au". Philosophical Magazine A, 1997, vol. 76, No. 6, 1119-1138.

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