Generic process for preparing a crystalline oxide upon a group I

Details Generic process for preparing a crystalline oxide upon a group I Generic process for preparing a crystalline oxide upon a group I

1999-04-06

2000-11-07

Utech, Benjamin L.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Using an energy beam or field, a particle beam or field, or...

117944, C30B 2306

Patent

active

061430722

ABSTRACT:
A process for growing a crystalline oxide epitaxially upon the surface of a Group IV semiconductor, as well as a structure constructed by the process, is described. The semiconductor can be germanium or silicon, and the crystalline oxide can generally be represented by the formula (AO).sub.n (A'BO.sub.3).sub.m in which "n" and "m" are non-negative integer repeats of planes of the alkaline earth oxides or the alkaline earth-containing perovskite oxides. With atomic level control of interfacial thermodynamics in a multicomponent semiconductor/oxide system, a highly perfect interface between a semiconductor and a crystalline oxide can be obtained.

REFERENCES:
patent: 5089862 (1993-02-01), Warner, Jr. et al.
patent: 5225031 (1993-07-01), McKee et al.
patent: 5248633 (1993-09-01), Morar et al.
patent: 5482003 (1996-01-01), McKee et al.
patent: 5830270 (1998-11-01), McKee et al.

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