Generating simulated diffraction signals for two-dimensional...

Details Generating simulated diffraction signals for two-dimensional... Generating simulated diffraction signals for two-dimensional...

2002-10-17

2008-09-23

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

Reexamination Certificate

active

07427521

ABSTRACT:
One or more simulated diffraction signals for use in determining the profile of a structure formed on a semiconductor wafer can be generated, where the profile varies in more than one dimension. Intermediate calculations are generated for variations in a hypothetical profile of the structure in a first dimension and a second dimension, where each intermediate calculation corresponds to a portion of the hypothetical profile of the structure. The generated intermediate calculations are then stored and used in generating one or more simulated diffraction signals for one or more hypothetical profiles of the structure.

REFERENCES:
patent: 6720575 (2004-04-01), Yamazaki et al.
patent: 6721691 (2004-04-01), Bao et al.
patent: 6734982 (2004-05-01), Banet et al.
patent: 6785638 (2004-08-01), Niu et al.
International Search Report mailed on Oct. 13, 2004, for PCT patent application No. PCT/US03/32779 filed on Nov. 20, 2003, 2 pages.

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