Method for forming isolation trench in a semiconductor...

Details Method for forming isolation trench in a semiconductor... Method for forming isolation trench in a semiconductor...

2005-12-28

2008-09-09

Smith, Bradley K (Department: 2891)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C257SE21546

Reexamination Certificate

active

07422959

ABSTRACT:
A method for forming an isolation region in a semiconductor device such as a photodiode forms depletion layers at boundary regions between N-type regions of the photodiode and an ion injection layer in which P-type impurity ions are injected. Depletion layers are also formed between the N-type regions of the photodiode and a substrate of P-type semiconductor. Thus, depletion layers minimize a leakage current and eliminate interface defects. Low temperature processes are applied to prevent the impurity ions in the substrate from diffusing undesirably, thereby maximizing the pinning effect of the semiconductor device. The method includes steps of forming a trench region in a substrate; forming an ion injection layer by injecting impurity ions into an inner sidewall of the trench region; and forming an isolation region for a semiconductor device by filling the trench region with an undoped silicate glass film interposing the ion injection layer.

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patent: 10-20020096136 (2002-12-01), None
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