Generating nitride waveguides

Details Generating nitride waveguides Generating nitride waveguides

2005-03-01

2005-03-01

Goudreau, George A. (Department: 1763)

Etching a substrate: processes

Etching of semiconductor material to produce an article...

C216S039000, C216S090000, C438S031000, C438S745000, C438S747000

Reexamination Certificate

active

06861005

ABSTRACT:
Polysilicon formed over an underlying insulator may be highly selectively etched. Therefore, polysilicon may be selectively etched using tetraalkylammonium hydroxide or NH4OH to define a nitride waveguide. The resulting nitride waveguide may have smoother surfaces resulting in less loss of light intensity as light travels through the nitride waveguide.

REFERENCES:
patent: 6060388 (2000-05-01), Akatsu et al.
patent: 6613648 (2003-09-01), Lim et al.
patent: 6740595 (2004-05-01), Kudelka et al.

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