General protection of an integrated circuit against permanent ov

Details General protection of an integrated circuit against permanent ov General protection of an integrated circuit against permanent ov

1994-12-22

1996-04-16

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257357, 257358, 257361, 257362, 257363, 257370, H01L 2362, H01L 2976

Patent

active

055085482

ABSTRACT:
In an integrated circuit, a diode is interposed between the semiconductor substrate and the contact pad to an external bias voltage, and the substrate is biased at an internal voltage reference. Between each contact pad of the integrated circuit and semiconductor substrate, there is positioned a protection device against permanent overloads and a protection device against electrostatic discharges. By isolating the semiconductor substrate from the external voltages source and by placing a protection device between each contact pad and the substrate, a broad, general protection of the integrated circuit is obtained against all the destructive phenomena such as overloads, positive and negative overvoltages, polarity reversal and electrostatic discharges.

REFERENCES:
patent: 3879640 (1975-04-01), Schade, Jr.
patent: 4460935 (1984-07-01), Uehira
patent: 4922371 (1990-05-01), Gray et al.
patent: 4939616 (1990-07-01), Rountree
patent: 5272371 (1993-12-01), Bishop et al.

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