Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-28
2006-11-28
Flynn, Nathan L. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S213000, C257S288000, C257S314000, C257S315000, C257S325000, C257SE29309
Reexamination Certificate
active
07141850
ABSTRACT:
In one aspect, the invention includes a method of forming a gated semiconductor assembly, comprising: a) forming a silicon nitride layer over and against a floating gate; and b) forming a control gate over the silicon nitride layer. In another aspect, the invention includes a method of forming a gated semiconductor assembly, comprising: a) forming a floating gate layer over a substrate; b) forming a silicon nitride layer over the floating gate layer, the silicon nitride layer comprising a first portion and a second portion elevationally displaced from the first portion, the first portion having a greater stoichiometric amount of silicon than the second portion; and c) forming a control gate over the silicon nitride layer. In yet another aspect, the invention includes a gated semiconductor assembly comprising: a) a substrate; b) a floating gate over the substrate; c) a control gate over the floating gate; and d) an electron barrier layer between the floating gate and the control gate, the electron barrier layer comprising a silicon nitride layer, the silicon nitride layer comprising a first portion and a second portion elevationally displaced from the first portion, the first portion having a greater stoichiometric amount of silicon than the second portion.
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DeBoer Scott Jeffrey
Fischer Mark
Helm Mark A.
Moore John T.
Flynn Nathan L.
Quinto Kevin
Wells St. John P.S.
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