Gated diode nonvolatile memory cell

Static information storage and retrieval – Systems using particular element – Semiconductive

Reexamination Certificate

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C365S185180, C365S185010, C257S104000

Reexamination Certificate

active

11298288

ABSTRACT:
A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal. Example embodiments include the individual memory cell, an array of such memory cells, methods of operating the memory cell or array of memory cells, and methods of manufacturing the same.

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