Gate turn-off thyristor module

Details Gate turn-off thyristor module Gate turn-off thyristor module

1984-03-22

1987-01-06

Zazworsky, John

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307252H, 307305, 357 72, 357 76, H03K 1772, H03K 1714

Patent

active

046348913

ABSTRACT:
A gate turn-off thyristor module having reduced circuit inductances. One or more gate turn-off thyristor chips are housed in a resin package. The main electrode and control terminals are disposed on an upper face of the package, while terminals for making connections to a snubber circuit are positioned at a different height from the main electrode control terminals. Preferably, the snubber circuit connecting terminals are located as close as possible to the respective electrode of their corresponding thyristor chip.

REFERENCES:
patent: 4335392 (1982-06-01), Reiter
patent: 4518982 (1985-05-01), Du Bois et al.
GTO-Thyristoren, Peter Wilson, No. 18/9.9, 1983, pp. 115-118.
Der Gate-Abschaltbare Thyristor und Seine Ansteuerung, Electronik-Applikation 15 pages, 1983, No. 3, pp. 47-50.
Switch-Off Behavior, Elektrie, 35, 1981, vol. 3, pp. 119-122, F. Fisher, and H. Conrad.
Transistoren-Thristoren-GTOs, Dr. K. Platzoder, Elektrie 35, 7-1983, pp. 32-34.
Thyristors: Future Workhorses in Power Transmission, IEEE Spectrum, Dec. 1982, pp. 40-45.

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