Gate structures of CMOS device and method for manufacturing...

Details Gate structures of CMOS device and method for manufacturing... Gate structures of CMOS device and method for manufacturing...

2009-09-11

2011-11-29

Booth, Richard A. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

08067806

ABSTRACT:
Gate structures of CMOS device and the method for manufacturing the same are provided. A substrate having an NMOS region, a PMOS region, and a work function modulation layer disposed on the NMOS region and the PMOS region is provided. A nitrogen doping process is performed to dope nitrogen into a portion of the work function modulation layer disposed on the PMOS region so as to form an N-rich work function modulation layer disposed on the PMOS region. A nonmetallic conductive layer is formed blanketly covering the work function modulation layer and the N-rich work function modulation layer. A portion of the nonmetallic conductive layer, the work function modulation layer, and the N-rich work function modulation layer is removed to form a first gate in the NMOS region and a second gate in the PMOS region.

REFERENCES:
patent: 6696345 (2004-02-01), Chau
patent: 2004/0222474 (2004-11-01), Chau et al.
patent: 2005/0059198 (2005-03-01), Visokay et al.
patent: 2009/0057787 (2009-03-01), Matsuki
Jörgen Westlinder et al., “Variable work function in MOS capacitors utilizing nitrogen-controlled TiNx gate electrodes”, Nov. 2004, p. 389-396, vol. 75 Issue 4, Microelectronic Engineering.
Hitoshi Wakabayashi et al., “A Dual-Metal Gate CMOS Technology Using Nitrogen-Concentration-Controlled TiNx Film”, IEEE Transactions on Electron Devices, vol. 48, No. 10, Oct. 2001, pp. 2363-2369.

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