Gate structures having sidewall spacers formed using...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S900000, C438S197000, C438S199000

Reexamination Certificate

active

11395818

ABSTRACT:
Sidewall spacers are disclosed that extend on opposing sidewalls of gate stacks. The sidewall spacers have improved profiles to suppress or eliminate void formation between the gate stacks during gap-filling A gate dielectric layer is formed on a semiconductor substrate. Then, a gate stack24having a sidewall is formed over the gate dielectric layer. The gate stack24comprises a conductive layer28and a hard mask30overlying the conductive layer28. A liner32is selectively deposited over the gate stack24such that the liner32is deposited on the hard mask30at a rate lower than the rate of deposition on the conductive layer28. Thus, the liner32is substantially thinner on the hard mask30than on the conductive layer28. A nitride spacer is formed over34the liner32. A PMD layer is formed over the resultant structure, filling the gaps between adjacent gate stacks.

REFERENCES:
patent: 4981810 (1991-01-01), Fazan et al.
patent: 5731236 (1998-03-01), Chou et al.
patent: 6001719 (1999-12-01), Cho et al.
patent: 6281084 (2001-08-01), Akatsu et al.
patent: 6486506 (2002-11-01), Park et al.
patent: 6566236 (2003-05-01), Syau et al.

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