Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-05-20
2008-05-20
Toledo, Fernando L. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S900000, C438S197000, C438S199000
Reexamination Certificate
active
07375392
ABSTRACT:
Sidewall spacers are disclosed that extend on opposing sidewalls of gate stacks. The sidewall spacers have improved profiles to suppress or eliminate void formation between the gate stacks during gap-filling A gate dielectric layer is formed on a semiconductor substrate. Then, a gate stack24having a sidewall is formed over the gate dielectric layer. The gate stack24comprises a conductive layer28and a hard mask30overlying the conductive layer28. A liner32is selectively deposited over the gate stack24such that the liner32is deposited on the hard mask30at a rate lower than the rate of deposition on the conductive layer28. Thus, the liner32is substantially thinner on the hard mask30than on the conductive layer28. A nitride spacer is formed over34the liner32. A PMD layer is formed over the resultant structure, filling the gaps between adjacent gate stacks.
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Chen Chih-Hsiang
Lee Shih-Ked
Lo Guo-Qiang
Glass Kenneth
Integrated Device Technology Inc.
Johnson, Jr. Alexander C.
Toledo Fernando L.
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