Gate structure of semiconductor memory

Details Gate structure of semiconductor memory Gate structure of semiconductor memory

1998-04-07

2000-04-04

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257900, H01L 2976, H01L 2994, H01L 27088

Patent

active

060464844

ABSTRACT:
An improved semiconductor memory device comprising memory cell areas including driving transistors having capacitors with increased capacitance. The driving transistors comprise a gate insulating film formed on a semiconductor substrate, a lower gate electrode formed on the gate insulating film, an upper gate electrode having a size smaller than the lower gate electrode and formed on the lower gate electrode, and an insulating film formed on the lower gate electrode so as to contact with a side wall of the upper gate electrode.

REFERENCES:
patent: 4907048 (1990-03-01), Huang
patent: 5097301 (1992-03-01), Sanchez
patent: 5158903 (1992-10-01), Hori et al.

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