Gate structure of a semiconductor device

Details Gate structure of a semiconductor device Gate structure of a semiconductor device

2006-09-05

2006-09-05

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S354000

Reexamination Certificate

active

07102187

ABSTRACT:
Disclosed herein is a method for forming a gate structure in a semiconductor device. The method comprises forming a SiGe film on a predetermined region of a silicon substrate corresponding to a bit-line node portion where a bit-line junction is formed, growing a silicon film over the silicon substrate having the SiGe film formed thereon, selectively etching the SiGe film, embedding a dielectric material into a portion where the SiGe film is removed, forming a stepped profile on the silicon film by etching a predetermined portion of the silicon film such that the bit-line node portion is included in the stepped profile, and forming a gate on the silicon film having the stepped profile formed therein such that the gate overlaps the stepped profile. The dielectric pad prevents the bit-line junction from spreading downward upon operation of the gate, thereby enhancing a punch-through phenomenon.

REFERENCES:
patent: 6274913 (2001-08-01), Brigham et al.
patent: 6670253 (2003-12-01), Lee
patent: 403053534 (1991-03-01), None

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