Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-06
2006-06-06
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S316000, C257S309000
Reexamination Certificate
active
07057227
ABSTRACT:
The present invention relates to a gate structure of a flash memory cell and method of forming the same, and method of forming a dielectric film. The method of forming the dielectric film in the flash memory cell comprises the steps of preparing a wafer including a tunnel oxide film formed in a given region of a semiconductor substrate, a polysilicon film formed on the tunnel oxide film, and an oxide film and a silicon nitride film formed on the polysilicon film; preparing a work cell in which a voltage is applied to the rear side of the semiconductor substrate used as a work electrode in which the silicon nitride film is formed, a relative electrode and a reference electrode are kept by a given distance so that they can be immersed in electrolyte, and in which an ultraviolet rays source is formed on an upper side to illuminate an ultraviolet rays to a work electrode; and performing electro-chemical etch using silicon dissociation reaction for the wafer mounted on the work cell to form porosities in the silicon nitride film.
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Flynn Nathan J.
Hynix / Semiconductor Inc.
Mayer Brown Rowe & Maw LLP
Sefer Ahmed N.
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