Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-27
2009-06-02
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S328000, C257S329000, C257S331000, C257S332000, C257S333000, C257S334000
Reexamination Certificate
active
07541641
ABSTRACT:
Disclosed are a gate structure in a trench region of a semiconductor device and method for manufacturing the same. The semiconductor device includes a pair of drift regions formed in a semiconductor substrate; a trench region formed between the pair of drift regions; an oxide layer spacer on sidewalls of the trench region; a gate formed in the trench region; and a source and a drain formed in the pair of the drift regions, respectively.
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First Office Action; Application No. 200610170172.9; Dated: May 9, 2008; The State Intellectual Property Office of the People's Republic of China; People's Republic of China.
Dongbu Electronics Co. Ltd.
Fortney Andrew D.
Soward Ida M
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