Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-17
2005-05-17
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21205, C257SE21624, C257SE21626
Reexamination Certificate
active
06894357
ABSTRACT:
A new method is provided for the creation of sub-micron gate electrode structures. A high-k dielectric is used for the gate dielectric, providing increased inversion carrier density without having to resort to aggressive scaling of the thickness of the gate dielectric while at the same time preventing excessive gate leakage current from occurring. Further, air-gap spacers are formed over a stacked gate structure. The gate structure consists of pre-doped polysilicon of polysilicon-germanium, thus maintaining superior control over channel inversion carriers. The vertical field between the gate structure and the channel region of the gate is maximized by the high-k gate dielectric, capacitive coupling between the source/drain regions of the structure and the gate electrode is minimized by the gate spacers that contain an air gap.
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Fourson George
Taiwan Semiconductor Manufacturing Company
Thomas Kayden Horstemeyer & Risley
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